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IXKC 23N60C5
CoolMOS ? 1) Power MOSFET
Electrically isolated back surface
2500 V electrical isolation
I D25 = 23 A
V DSS = 600 V
R DS(on) max = 0.1 Ω
N-Channel Enhancement Mode
Low R DSon , high V DSS MOSFET
Ultra low gate charge
D
ISOPLUS220 TM
G
G
D
S
?
isolated back
Preliminary data
MOSFET
S
E72873
Features
surface
Symbol
V DSS
V GS
I D25
I D90
Conditions
T VJ = 25°C
T C = 25°C
T C = 90°C
Maximum Ratings
600 V
± 20 V
23 A
16 A
? Silicon chip on Direct-Copper-Bond
substrate
- high power dissipation
- isolated mounting surface
- 2500 V electrical isolation
- low drain to tab capacitance (< 30 pF)
? Fast CoolMOS ? 1) power MOSFET 4 th
I D = 11 A; T C = 25°C
E AS
E AR
dV/dt
single pulse
repetitive
MOSFET dV/dt ruggedness V DS = 0...480 V
800
1.2
50
mJ
mJ
V/ns
generation
- high blocking capability
- lowest resistance
- avalanche rated for unclamped
inductive switching (UIS)
Symbol
Conditions
Characteristic Values
(T VJ = 25 ° C, unless otherwise specified)
min. typ. max.
- low thermal resistance
due to reduced chip thickness
? Enhanced total power density
R DSon
V GS(th)
I DSS
I GSS
V GS = 10 V; I D = 18 A
V DS = V GS ; I D = 1.2 mA
V DS = 600 V; V GS = 0 V
V GS = ± 20 V; V DS = 0 V
T VJ = 25°C
T VJ = 125°C
2.5
90
3
50
100
3.5
5
100
m W
V
μA
μA
nA
Applications
? Switched mode power supplies
(SMPS)
? Uninterruptible power supplies (UPS)
? Power factor correction (PFC)
? Welding
? Inductive heating
C iss
C oss
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
R thJC
V GS = 0 V; V DS = 100 V
f = 1 MHz
V GS = 0 to 10 V; V DS = 400 V; I D = 18 A
V GS = 10 V; V DS = 400 V
I D = 18 A; R G = 3.3 ?
2800
130
60
14
20
10
5
60
5
80
0.85
pF
pF
nC
nC
nC
ns
ns
ns
ns
K/W
? PDP and LCD adapter
Advantages
? Easy assembly:
no screws or isolation foils required
? Space savings
? High power density
? High reliability
CoolMOS ? is a trademark of
1)
Infineon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
? 2010 IXYS All rights reserved
20100303c
1-4
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相关代理商/技术参数
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IXKH20N60C5 功能描述:MOSFET 20 Amps 600V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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